FGL60N100D igbt equivalent, igbt.
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* High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode
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* High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A High Input Im.
Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications
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